量子物質科學協同創新中心seminar：Cognitive devices based on ion currents in oxide thin films

報告題目： Cognitive devices based on ion currents in oxide thin films 報告人： Stuart S. P. Parkin Max Planck Institute for Microstructure Physics, Halle (Saale), Germany IBM Research – Almaden, San Jose, California, USA 報告時間： 2015-5-13 14:30 報告地點：理科樓三樓報告廳（C302）摘要： Conventional silicon based electronic computing devices use about one million times more energy to carry out a computing operation than does a mammalian brain. The devices, interconnections, and information processing paradigms in the latter are profoundly different from those used in today’s computers. Approaches to the development of extremely energy efficient computing will likely rely on devices that operate on entirely different principles, that are mutable, and which likely possess innately three dimensional structures and architectures. We discuss one possible approach that relies on the control of the conductivity of oxide thin films via tiny but reversible ionic currents of oxygen ions that are induced by very large electric fields at the interface with ionic liquids1. Removal of sub atomic percent concentrations of oxygen from structures that have open channels for the ready migration of oxygen gives rise to giant structural distortions2 and metallization of what were initially insulating layers. This may allow a path to innately mutable, cognitive switches.
1. Jeong, J. et al. Suppression of Metal-Insulator Transition in VO2 by Electric Field–Induced Oxygen Vacancy Formation. Science 339, 1402-1405, (2013).
2. Jeong, J. et al. Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating. Proc. Natl. Acad. Sci. 112, 1013-1018, (2015). 個人簡介： Dr. Stuart Parkin is an IBM Fellow, Manager of the Magnetoelectronics group at the IBM Almaden Research Center, and a Consulting professor in the Dept. of Applied Physics at Stanford University. Recently Dr. Parkin was appointed Director, Max Planck Institute for Microstructure Physics, Halle Germany, and an Alexander von Humboldt Professor at the Martin Luther University Halle-Wittenberg. Dr. Parkin's research interests include oxide thin film heterostructures, high-temperature superconductors, and, magnetic thin film structures and spintronic materials and devices for advanced sensor, memory, and logic applications. Parkin’s discoveries in magneto-resistive thin film structures enabled a 1000 fold increased in the storage capacity of magnetic disk drives. Most recently, Parkin’s research is focused on a novel storage class memory device, “Racetrack Memory”, and cognitive materials that could enable very low power computing technologies. Parkin is a Member of the National Academy of Sciences, and the National Academy of Engineering, a Fellow of the American Academy of Arts and Sciences, a Fellow of the Royal Society (London), an Honorary Fellow of the Indian Academy of Sciences and a Fellow of TWAS, the World Academy of Sciences. Parkin is the recipient of numerous awards and honors including, most recently, the 2012 von Hippel Award from the Materials Research Society, 2013 Swan Medal of the Institute of Physics (London), and the 2014 Millennium Technology Award from the Technology Academy Finland (worth 1,000,000 Euros). Parkin was recently elected an Honorary Fellow of Trinity College, Cambridge. Parkin has published ~450 papers and has an h-index of 87.