2014年11月20日（周四）下午16：00，量子物質科學協同創新中心清華分中心seminar：

報告題目： The Developing Status and Challenge for Non-volatile Memory 報告人：劉明研究員中國科學院微電子研究所報告時間： 2014-11-20 16:00 報告地點：清華大學理科樓鄭裕彤大講堂摘要： As the semiconductor device continues scaling down, conventional Flash memory is facing more and more bottlenecks and will be very difficult to go through 16 nm node. According to the white paper of ITRS 2011, STT-MRAM and RRAM are thought as the most promising technologies among various emerging non-volatile memory concepts, and are worthy to put additional focuses on research and development to accelerate the progress toward commercialization. In this talk, semiconductor memory will be summarized, especially focus on flash memory. Then, a brief introduction on RRAM technology will be given and its opportunities & challenges will be discussed. Lastly, research works of RRAM in IMECAS will be introduced. 個人簡曆：劉明，中國科學院微電子研究所研究員，研究方向：納米加工和新型存儲器技術。973首席科學家、國家傑出青年基金獲得者和基金委創新群體負責人、入選“2013年國家百千萬人才工程”。發表SCI收錄論文150餘篇, SCI引用超過2000次，3篇論文入選 High cited paper (Top 1%)。獲得2013年國家發明二等獎（排名第一）、2007年國家發明二等獎（排名第二）和2012年真空科技成就獎等獎項。